Silicon carbide (SiC) unipolar semiconductors are in wide commercial use, but their operations are limited by a trade-off relationship between breakdown voltage and specific resistance of the drift ...

Overheating in electronic devices affects how it works and how long it lasts. One of the major challenges is efficiently managing the heat generated by these systems during operation, which involves ...

Compared with other regions of the electromagnetic spectrum terahertz (THz), the frequency range between the infrared and the microwave, has been relatively neglected. A group from the Chinese ...

NIMS, in joint research with the University of Tokyo, AIST, the University of Osaka, and Tohoku University, have proposed a ...

Active metadevices integrated with semiconductors. (a) Hybrid silicon-metallic resonators for all-optical ultrafast active metamaterials. (b) Broadband metamaterial frequency switch with femtosecond ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Introducing a vertical arrangement of n and p layers into the drift layer of semiconductors to enable bipolar operation is a way around the 'unipolar limit' problem in semiconductors. But defect ...