A new generation of 1200 V silicon carbide power modules raises the bar on current density and thermal performance, targeting high-power EV charging, industrial drives, and energy conversion systems.

International Rectifier, IR, has expanded its family of highly integrated, ultra-compact, patent pending µIPM power modules. International Rectifier has expanded its family of highly integrated, ultra ...

The global Tier 1 automotive supplier involved in this evaluation is consistently ranked among the top 15 largest by revenue and is a recognized leader in automotive electrification. Specializing in ...

Wolfspeed is bringing the power-handling properties of silicon carbide (SiC) to the renewable energy, energy storage, and high-capacity EV fast-charging sectors with its new family of 2,300-V power ...

SemiQ continues to expand its Gen3 QSiC MOSFET portfolio with 1200-V power modules offering high current density and low thermal resistance. The new seven-device lineup includes high-current S3 ...

Navitas Semiconductor has expanded its portfolio of SiCPAK power modules with new 1,200-V devices that feature epoxy-resin potting and proprietary trench-assisted planar SiC MOSFET technologies. These ...

Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...

The stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by 1-fold, SiC power modules allow for ...