Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier ...
With the emergence of new 2D materials, there is a developing interest in the fabrication of interconnecting nanowires that bond strongly to the edge of 2D sheets instead of weakly adhering to the ...
Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. In the DMOSFET structure, the MOS channel is ...
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