RENO, Nev., April 30, 2020 (GLOBE NEWSWIRE) -- Reno Sub-Systems, Inc. (Reno), a developer of high performance radio frequency (RF) matching networks for leading-edge nanoscale semiconductor ...
In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
This application note describes the way to design an output matching network at a given load resistance. The document presented can also be used in all Melexis transmitter and transceiver integrated ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback