The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
Complementary Metal-Oxide-Semiconductor (CMOS) technology is a vital part of modern electronics, used in designing and manufacturing integrated circuits (ICs) that power many digital devices. CMOS ...
Washington, D.C. — Intel Corp. faced off against the alliance of Advanced Micro Devices and IBM on the stage of the International Electron Devices Meeting here Tuesday (Dec. 6th), presenting 65-nm ...
The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA ...
For many decades, progress in electronics has been driven by a gradual reduction in the size of silicon transistors (electronic switches). However, this scaling is becoming increasingly difficult and ...
Quickly learn what the difference is between PMOS and NMOS transistors in their structure and operation, and how CMOS works with the two in combination. Siliwiz, a free, browser-based, ASIC layout ...
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm ...
KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...
Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...
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