Advances in TMD growth Building on our success in scaling ultra-wide bandgap materials, we have made significant progress in expanding scalable growth of two-dimensional (2D) materials, specifically ...

Aside from a couple of makers of optical components, shares of companies in the CS industry have headed south over the last ...

The cost of SiC substrates needs to come down. But are we going to hamper these efforts by imposing limits on the thickness ...

Altum RF will show its latest RF and mmWave products and technical expertise at IMS 2025, to be held in San Francisco, US.15 ...

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Navitas Semiconductor, maker of GaNFast GaN and GeneSiC SiC power semiconductors, has announced a collaboration with NVIDIA ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...

Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...

KLA Corporation, a US company specialising ni semiconductor process control, has announced the opening of its new $138m R&D and manufacturing center in Newport, Wales, UK, continuing the company’s ...

AlN vs BN The obvious candidate material for providing cathodoluminescence is AlN, a key semiconductor for producing deep UV ...

Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals” Appl. Phys. Express. 10 045504 (2017). The strengths of GaN are not just a high breakdown voltage that results from the wide ...

Scientists studying a promising quantum material called MnBi₆Te₁₀ have stumbled upon a surprise: within its crystal structure ...