Memory technology has evolved quickly in recent years, driven by the need to improve on traditional systems. One promising candidate, Magnetoresistive Random Access Memory (MRAM), is gaining attention ...

A major breakthrough in the field of computer memory has just been achieved by Japanese researchers. They have developed a new universal memory technology, surpassing current computer modules in speed ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

Compute Express Link (CXL), the technology for connecting memory, was among the themes at last week’s Future of Memory and Storage summit in Santa Clara. CXL is an open standard for high-speed, ...